This device consists of a n-channel depletion mode MOS transistor, a lateral pnp bipolar transistor and a resistor and has the behavior of "dual negative resistance" characteristics and easily controlled resistance in positive resistance region. 该器件由一n沟耗尽型MOS管、一横向pnp双极晶体管和一个电阻集成而得。它具有双负阻特性和正阻区阻值易于控制等特点。
Lateral channel field-controlled thyristor is a combination of a NJFET and a PNP bipolar transistor. 水平沟道场控晶闸管是由结型场效应晶体管和双极型晶体管复合构成的一种晶闸管。